maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. SD820S thru sd8100s dimensions in inches and (millimeters) rectifier specialists r dc components co., ltd. technical specifications of surface mount schottky barrier diode voltage range - 20 to 100 volts current - 8.0 amperes features mechanical data * metal to silicon rectifier majority carrier conduction * low power loss, high ef ficiency * high current capability * low forward voltage drop * high surge capacity * for use in low voltage high frequency inverters, free wheeling, and polarity protection applications maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current at t c =75 o c peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (jedec method) typical thermal resistance (note1) typical junction capacitance (note 2) symbol v rrm v dc i fsm c j t j , t stg v rms units volts volts volts amps 8.0 100 amps storage operating temperature range r q ja i o -55 to + 125 pf maximum dc reverse current at rated dc blocking voltage mamps maximum instantaneous forward voltage at 4.0a dc for "c suffixed", 2.0 50 @t a = 25 o c @t a = 100 o c 80 700 30 21 30 0.65 volts 0 c/w 0 c SD820S sd830s v f i r * case: molded plastic * epoxy: ul 94v-0 rate flame retardant * t erminals: solder plated, solderable per mil-std-750, method 2026 * mounting position: any * weight: 0.4 grams approx. sd840s sd850s sd860s sd880s sd8100s 20 14 20 40 28 40 50 35 50 60 42 60 80 56 80 100 70 100 0.75 0.85 note : 1. mounted on pc board with 14mm2(0.013mm thick) copper pad areas. 2. measured at 1 mhz and applied reverse voltage of 4.0 volts. and at 8.0a dc for "y suffixed" & "no suffix" no suffix 2 3 2 1 3 "c" suffixed "y" suffixed 2 3 1 to-252(dpak) .268(6.8) .252(6.4) .217(5.5) .205(5.2) .024(0.6) .018(0.5) .022(0.6) .018(0.5) .063(1.6) .055(1.4) .228(5.8) .213(5.4) .110(2.8) .087(2.2) .091 (2.3) typ .035 (0.9) max .032 (0.8) max .077(2.0) .065(1.7) .059(1.5) .035(0.9) 1 2 3 2 rev-1,apr/25/2013
rating and characteristic curves (SD820S thru sd8100s) r dc components co., ltd. 0 20 40 0.001 0.01 1.0 10 0.1 60 80 100 120 percent of rated peak reverse voltage, (%) reverse current, (ma) fig. 2 - typical reverse characteristics tj = 25oc tj = 75oc tj = 100oc 140 0.2 0.4 0.6 0.8 1.0 0.1 1.0 10 50 fig. 3 - typical instantaneous forward characteristics instantaneous forward voltage, (v) instantaneous forward current, (a) tj = 25oc f = 1.0mhz vsig = 50mvp-p sd880s(y)~sd8100s(y) sd850s(y)~sd860s(y) SD820S(y)~sd840s(y) 0 20 40 60 80 100 120 140 fig. 1 - typical forward current dera ting curve case temperature, ( oc) average forward current, (a) 10 8.0 4.0 0 single phase half wave 60hz resistive or inductive load 2.0 6.0 1 10 0 20 60 80 100 40 100 number of cycles at 60hz peak forward surge current, (a) fig. 6 - maximum non-repetitive forward surge current 120 0.2 0.4 0.6 0.8 1.0 0.1 1.0 10 50 fig. 4 - typical instantaneous forward characteristics instantaneous forward voltage, (v) instantaneous forward current, (a) tj = 25oc f = 1.0mhz vsig = 50mvp-p sd880sc~sd8100sc sd850sc~sd860sc SD820Sc~sd840sc 1.0 10 0.1 10 100 1000 10000 100 reverse voltage, (v) junction capacitance, (pf) fig. 5 - typical junction capacitance tj = 25oc f = 1.0mhz vsig = 50mvp-p SD820Sc~sd8100sc SD820S(y)~sd8100s(y) rev-1,apr/25/2013
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